SiGe hupfu, inozivikanwawo sesilicon germanium upfu, chinhu chakagamuchira kutariswa kukuru mumunda we semiconductor tekinoroji.Ichi chinyorwa chine chinangwa chekuenzanisira kuti seiSiGeinoshandiswa zvakanyanya mumhando dzakasiyana-siyana dzekushandisa uye kuongorora zvayo zvakasiyana zvivakwa uye zvakanakira.
Silicon germanium podachinhu chinoumbwa chinoumbwa nesilicon uye germanium maatomu.Iko kusanganiswa kwezvinhu zviviri izvi kunogadzira chinhu chine zvinoshamisa zvimiro zvisingawanikwe mune yakachena silicon kana germanium.Chimwe chezvikonzero zvikuru zvekushandisaSiGendiko kuenderana kwayo kwakanyanya nesilicon-based technologies.
KubatanidzaSiGemune silicon-yakavakirwa zvishandiso inopa akati wandei mabhenefiti.Imwe yemabhenefiti makuru ndiko kugona kwayo kushandura zvinhu zvemagetsi zvesilicon, nekudaro kuvandudza kushanda kwezvinhu zvemagetsi.Kuenzaniswa nesilicon,SiGeine erekitironi yepamusoro uye kufamba kwegomba, inobvumira kukurumidza kutakura maerekitironi uye kuwedzera kukurumidza kwechigadzirwa.Ichi chivakwa chinonyanya kubatsira kune yakakwira-frequency application, senge isina waya yekutaurirana masisitimu uye yakakwirira-kumhanya yakasanganiswa maseketi.
Uyezve,SiGeine bhendi yakaderera pane silicon, iyo inobvumira kuti itore uye ibudise chiedza zvakanyanya.Ichi chivakwa chinoita kuti ive yakakosha zvinhu zveoptoelectronic zvishandiso senge photodetectors uye light-emitting diodes (LEDs).SiGezvakare ine yakanakisa yekupisa conductivity, ichiibvumira kuti iparadze kupisa zvakanaka, ichiita kuti ive yakanaka kune zvishandiso zvinoda kunyatso kudzora kupisa.
Chimwe chikonzero cheSiGeKushandiswa kwakapararira ndiko kuenderana kwayo nearipo ekugadzira silicon maitiro.SiGe hupfuinogona kusanganiswa nyore nyore nesilicon uye yozoiswa pasilicon substrate uchishandisa yakajairwa semiconductor kugadzira matekiniki akadai semakemikari vapor deposition (CVD) kana molecular beam epitaxy (MBE).Uku kusanganisa kusina musono kunoita kuti zvidhure uye kuve nechokwadi shanduko yakatsetseka yevagadziri vakatogadzira silicon-based kugadzira zvivakwa.
SiGe hupfuinogonawo kugadzira silicon yakaomeswa.Strain inogadzirwa musilicon layer nekuisa iyo nhete yeSiGepamusoro pesilicon substrate uye wobva wasarudza kubvisa maatomu egermanium.Iyi dhizaini inoshandura iyo silicon's bhendi chimiro, ichiwedzera kuwedzera kwayo magetsi emagetsi.Siricon yakaomeswa yave chinhu chakakosha mu-high-performance transistors, ichigonesa kukurumidza kushandura kumhanya uye kuderera kwesimba rekushandisa.
Pamusoro pe,SiGe hupfuine huwandu hwakawanda hwekushandisa mumunda we thermoelectric madivayiri.Zvishandiso zveThermoelectric zvinoshandura kupisa kuita magetsi uye zvakasiyana, zvichiita kuti zvive zvakakosha mumashandisirwo akadai sekugadzira magetsi uye kutonhora masisitimu.SiGeine yakakwirira yekupisa conductivity uye inogoneka magetsi zvivakwa, ichipa chinhu chakanakira kugadzirwa kweanoshanda thermoelectric zvishandiso.
Mukupedzisa,SiGe hupfu or silicon germanium upfuine akasiyana mabhenefiti uye mashandisiro mumunda we semiconductor tekinoroji.Kuenderana kwayo nesilicon iripo maitiro, yakanakisa magetsi zvivakwa uye yekupisa conductivity inoita kuti ive yakakurumbira zvinhu.Kunyangwe kuvandudza mashandiro emasekete akabatanidzwa, kugadzira optoelectronic zvishandiso, kana kugadzira inoshanda thermoelectric zvishandiso,SiGeinoramba ichiratidza kukosha kwayo sechinhu chine mabasa akawanda.Sezvo kutsvagisa uye tekinoroji zvichiramba zvichifambira mberi, isu tinotarisiraSiGe hupfukuita basa rakatonyanya kukosha mukugadzirisa ramangwana remidziyo yesemiconductor.
Nguva yekutumira: Nov-03-2023